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31.
 金属的冲击温度及熔化温度测量对构建其完全状态方程具有重要意义。简要综述了用于金属冲击温度及熔化温度辐射法测量的一维热传导理想界面模型和非理想界面模型,并着重对模型中明示或隐含的关键假定的合理性、影响金属冲击温度与熔化温度结果的主要因素进行了分析、讨论,以期对实验数据有一个合理的评估。还讨论了求解理想和非理想界面模型一维热传导方程界面温度时所隐含的冲击压缩下热导率不随温度而变、冲击压缩下金属样品/窗口界面辐射的灰体假定,以及窗口材料的透明性、非理想界面模型中表观界面温度的修正、动载条件下金属高压熔化温度的测量、界面的非Flourier热传导等问题。分析结果表明,目前采用辐射法测量大致可以得到冲击温度,在发生熔化的情况下可获得熔化温度,但离精密测量的要求还有较大差距。  相似文献   
32.
流-固界面波的激光激发与光偏转检测   总被引:1,自引:1,他引:0  
赵艳  沈中华  陆建  倪晓武 《光子学报》2006,35(12):1793-1797
基于光偏转原理,研制了可用于流-固界面波探测的光纤传感装置.在此基础上,建立了以调Q Nd∶YAG激光为流-固界面波激发光源的实验系统.实验上探测了激光在空气-铝、水-铝和酒精-铝等界面上激发的界面波波形.根据实验波形,算得在这三种界面上的泄漏Rayleigh波和Scholte波的速度分别为2889 m/s和339 m/s、2916 m/s和1512 m/s、2872 m/s和1184 m/s,此实验值与理论计算值相比,偏差小于5%.  相似文献   
33.
Thin layers of polystyrene were grown from surface-grafted nitroxide initiators via controlled “living” free radical polymerization. The “reactive” Langmuir-Blodgett deposition method allowed an effective control of the initiator layer density leading to PS brushes with different and high grafting density and stretching. The influence of the grafting density on the layer structure was studied. Comparison with theoretical predictions for monodispersed brushes in bad solvent was discussed. The thickness was found to vary linearly with molecular weight and the density dependence was shown using wetting measurements. Special features of controlled radical nitroxide polymerization from a surface were discussed. A direct comparison of the molecular weight and polydispersity between surface and bulk polymers was made by de-grafting the brushes into a toluene/HF solution. Finally, some evidence of a “surface Fischer” effect was shown from re-initiated layers. Received 20 December 2001  相似文献   
34.
Keiji Maeda   《Applied Surface Science》2002,190(1-4):445-449
We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.  相似文献   
35.
通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。  相似文献   
36.
Mössbauer spectroscopy with 57Fe (119Sn) probe layers is a useful method to study the local magnetic structures at buried interfaces. However interface alloying, which always exists in the real samples, have to be taken into account for accurate interpretation of experimental data. We developed an algorithm, which describes the interface intermixing in the multilayers. Substituting deposited atoms by atoms of substrate and floating of deposited atoms in the upper layers during epitaxial growth leads to the formation of asymmetric chemical and magnetic interfaces. This asymmetry in the M1/M2 superlattices can explain the difference between magnetic responses from M1 on M2 and M2 on M1 interfaces which were observed in experiments. Applying this intermixing model to the systems with probe layers located at different distances from the interfaces gives the natural explanation of hyperfine fields distributions on probe atoms and helps us clarify some discrepancies reported in the literature.  相似文献   
37.
李娟  华玉林  牛霞  王奕  吴晓明 《发光学报》2002,23(2):171-174
对以MEH-PPV为发光层的单层聚合物有机发光二极管(OLED)器件在最佳条件下进行真空热处理,并用金相显微镜观察施加电压后器件的阴极表面形貌。发现处理后的器件阴极表面的气泡及黑斑明显减少。器件的发光性能显著提高。与未经处理的器件相比,最大相对发光强度提高了一个数量级、启亮电压降低了2.0V,半寿命提高了12.7倍。初步分析表明热处理方法提高器件发光性能的主要原因在于有效地减少了器件在工作过程中由于焦耳热产生的某些气体,从而减少阴极表面气泡及黑斑的出现,另一方面,热处理方法也增强了有机发光层与阴极接触界面的结合力,提高电子注入水平。  相似文献   
38.
研究了油/水界面电解的示差半微分循环伏安行为。在0.01mol/L LiCl(w)-0.01mol/L TBATCIPB(nb)体系“电位窗”比TBATPB(nb)向正方向扩展约50mV,残余电流基本消除,使“电位窗”内的平台向左右拓宽约50mV。算得界面电容约为16μF/cm~2。考察了琥珀酰胆碱离子在w/nb界面的传递伏安特性,结果与一般半微分循环伏安法相似。但峰形改善,检测限降低一个数量级(1×10~(-6)mol/L),相对标准偏差在5%以内,可用于定量测定琥珀酰胆碱。  相似文献   
39.
Based on numerical calculations, the experiments on mixing at the interface of gases are analyzed. Single-mode and random disturbances of the interface and superposition of random disturbances onto long-wave perturbations are considered. Possible reasons for the higher value of the mixing constant obtained in the experiments are discussed.  相似文献   
40.
Utilizing forward recoil spectrometry (FRES), we have determined the segregation isotherm which describes the interfacial excess zi* of diblock copolymers of poly (d8-styrene-b-2-vinylpyridine) (dPS-PVP) at the interface between the homopolymers PS and PVP as a function of ?, the volume fraction of diblock copolymer remaining in the host homopolymer. All the samples were analyzed after annealing at temperatures and times sufficient to achieve equilibrium segregation. The effect of the degree of polymerization of both the diblock copolymers and the host homopolymers on the segregation isotherm is investigated. When the degree of polymerization of the homopolymer is much larger than that of the diblock copolymer, the normalized interfacial excess (zi*/Rg), where Rg is the radius of gyration of an isolated block copolymer chain, is a universal function of that portion of the block copolymer chemical potential due to chain stretching. The existence of such a universal function is predicted by theory and its form is in good agreement with self-consistent mean field calculations. Using these results, one can predict important aspects of the block copolymer segregation (e.g., the saturation interfacial excess) without recourse to the time-consuming numerical calculations. © 1994 John Wiley & Sons, Inc.  相似文献   
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